Falegaosimea fai vevela-fa'atau Snubber Mo High Powered Thyristor - High-vasega IGBT Snubber mamanu capacitor mo talosaga maualuga - CRE

Falegaosimea fai vevela-fa'atau Snubber Mo High Powered Thyristor - High-vasega IGBT Snubber capacitor mamanu mo talosaga maualuga - CRE Ata Fa'aalia

Fa'amatalaga Puupuu:

Fa'amatalaga Oloa

Faailoga o oloa

Vitio Faatatau

Manatu faaalia (2)

O a matou fale faʻapipiʻi lelei ma tulaga lelei lelei faʻatautaia i laʻasaga uma o le gaosiga e mafai ai ona matou faʻamautinoa le faʻamalieina atoa o tagata faʻatau moUilaina Inverter Dc So'oga Capacitor , Pusa Ata mo Abb Inverter , Pusa faaeletonika, O le mea lea, e mafai ona tatou faʻafeiloaʻi fesili eseese mai tagata faʻatau eseese.Fa'amolemole su'e la matou 'upega tafa'ilagi e siaki atili fa'amatalaga mai a matou oloa.

Falegaosimea fai vevela-fa'atau Snubber Mo High Powered Thyristor - High-vasega IGBT Snubber capacitor mamanu mo talosaga maualuga mana – CRE Fa'amatalaga:

Fa'amatalaga fa'apitoa

Va'aiga vevela o galuega	Max.Operating vevela., Luga, maualuga: +105℃ Vaega pito i luga vevela: +85℃ Maulalo vaega vevela: -40℃
tulaga gafatia	0.1μF～5.6μF
Voli fa'atatau	700V.DC~3000V.DC
Cap.tol	±5%(J);±10%(K)
Taofi le voltage	1.5Un DC/10S
Fa'aleaogaina	tgδ≤0.0005 C≤1μF f=10KHz tgδ≤0.001 C≥1μF f=10KHz
Tete'e puipui	C≤0.33μF RS≥15000 MΩ (i20℃ 100V.DC 60S) C＞0.33μF RS*C≥5000S(i20℃ 100V.DC 60S)
Taofi le ta'i	va'ai fa'amaumauga
Fa'aletonu le afi	UL94V-0
Fa'amoemoe ole olaga	100000h(Un; Θhotspot≤85°C)
Fa'asinomaga tulaga	IEC61071;GB/T17702;

laulau fa'amatalaga

Malolosi	Un 700V.DC,Urms400Vac;Us1050V
	Fua (mm)
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR @100KHz (mΩ)	ESL(nH)	dv/dt (V/μS)	Ipk(A)	Irms @40℃ @100KHz (A)
0.47	42.5	24.5	27.5	12	25	500	235	8
0.68	42.5	24.5	27.5	10	25	480	326.4	10
1	42.5	24.5	27.5	8	24	450	450	12
1.5	42.5	33.5	35.5	7	25	430	645	5
2	42.5	33	35.5	6	24	420	840	15
2.5	42.5	33	45	6	23	400	1000	18
3	42.5	33	45	5.5	22	380	1140	20
3	57.5	30	45	5	26	350	1050	22
3.5	42.5	33	45	5	23	350	1225	25
3.5	57.5	30	45	6	25	300	1050	22
4.7	57.5	35	50	5	28	280	1316	25
5.6	57.5	38	54	4	30	250	1400	25
6	57.5	38	54	3.5	33	230	1380	28
6.8	57.5	42.5	56	3.2	32	220	1496	32
8	57.5	42.5	56	2.8	30	200	1600	33
Malolosi	Un 1000V.DC,Urms500Vac;Us1500V
	Fua (mm)
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.47	42.5	24.5	27.5	11	25	1000	470	10
0.68	42.5	24.5	27.5	8	25	800	544	12
1	42.5	33.5	35.5	6	24	800	800	15
1.5	42.5	33	45	6	24	700	1050	15
2	42.5	33	45	5	22	700	1400	20
2.5	57.5	30	45	5	30	600	1500	22
3	57.5	35	50	4	30	600	1800	25
3.3	57.5	35	50	3.5	28	550	1815	25
3.5	57.5	38	54	3.5	28	500	1750	25
4	57.5	38	54	3.2	26	500	2000	28
4.7	57.5	42.5	56	3	25	420	1974	30
5.6	57.5	42.5	56	2.8	24	400	2240	32
Malolosi	I le 1200V.DC,Urms550Vac;Us1800V
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.47	42.5	24.5	27.5	11	24	1200	564	10
0.68	42.5	33.5	35.5	7	23	1100	748	12
1	42.5	33.5	35.5	6	22	800	800	14
1.5	42.5	33	45	5	20	800	1200	15
2	57.5	30	45	4	30	750	1500	20
2.5	57.5	35	50	4	28	700	1750	25
3	57.5	35	50	4	27	600	1800	25
3.3	57.5	38	54	4	27	550	1815	28
3.5	57.5	38	54	3.5	25	500	1750	28
4	57.5	42.5	56	3.5	25	450	1800	30
4.7	57.5	42.5	56	3.2	23	420	1974	32
Malolosi	I le 1700V.DC,Urms575Vac;Us2250V
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.33	42.5	24.5	27.5	12	25	1300	429	9
0.47	42.5	24.5	27.5	10	24	1300	611	10
0.68	42.5	33.5	35.5	8	23	1300	884	12
1	42.5	33	45	7	22	1200	1200	15
1.5	42.5	33	45	6	22	1200	1800	18
1.5	57.5	30	45	5	31	1200	1800	20
2	57.5	30	45	5	30	1100	2200	22
2.5	57.5	35	50	4	28	1100	2750	25
3	57.5	38	54	4	27	700	2100	25
3.3	57.5	38	54	3.8	26	600	1980	28
3.5	57.5	42.5	56	3.5	25	500	1750	30
4	57.5	42.5	56	3.2	25	450	1800	32
Malolosi	I le 2000V.DC,Urms700Vac;Us3000V
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.22	42.5	24.5	27.5	15	25	1500	330	10
0.33	42.5	33.5	35.5	12	24	1500	495	12
0.47	42.5	33.5	35.5	11	23	1400	658	15
0.68	42.5	33	45	8	22	1200	816	18
0.68	57.5	30	45	7	30	1100	748	20
0.82	42.5	33	45	7	28	1200	984	22
1	57.5	30	45	6	28	1100	1100	25
1.5	57.5	35	50	5	25	1000	1500	28
2	57.5	38	54	5	24	800	1600	28
2.2	57.5	42.5	56	4	23	700	1540	32
Malolosi	I le 3000V.DC,Urms750Vac;Us4500V
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.15	42.5	33	45	18	28	2500	375	25
0.22	42.5	33	45	15	27	2200	484	28
0.22	57.5	35	50	15	25	2000	330	20
0.33	57.5	35	50	12	24	1800	495	20
0.47	57.5	38	54	11	23	1600	752	22
0.68	57.5	42.5	56	8	22	1500	1020	28

Ata fa'amatalaga o oloa:

Ta'iala o Mea'ai Fa'atatau:

O lo matou faʻamoemoe e masani lava e faʻamalieina a matou tagata faʻatau e ala i le ofoina atu o le auʻaunaga auro, fua tele ma le lelei lelei mo Fale gaosi oloa faʻatau vevela Snubber Mo High Powered Thyristor - High-class IGBT Snubber capacitor design for high power applications - CRE , Le oloa o le a tuʻuina atu i tagata uma. i luga o le lalolagi, e pei o: Monaco, Potukale, Montreal, O loʻo i ai a matou tagata faʻatau mai le sili atu i le 20 atunuu ma o lo matou taʻutaʻua ua iloa e matou tagata faʻaaloalogia.O le fa'aleleia e le uma ma le taumafai mo le 0% fa'aletonu oa tatou faiga fa'avae autu e lua.Afai e te manaʻomia se mea, aua le faʻatuai e faʻafesoʻotaʻi matou.

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