Falegaosimea fai Snubber Capacitor Mo Igbt - E maualalo le leiloa dielectric o polypropylene film Snubber capacitor mo le IGBT talosaga - CRE

Falegaosimea fai Snubber Capacitor Mo Igbt - Fa'aitiitiga gau dielectric o polypropylene film Snubber capacitor mo le IGBT talosaga - CRE Fa'aalia Ata

Fa'amatalaga Puupuu:

Fa'amatalaga Oloa

Faailoga o oloa

Vitio Faatatau

Manatu faaalia (2)

O oloa taufetuli lelei, vaega o tupe maua tomai, ma oloa ma auaunaga sili atu pe a uma ona faatau atu;Ua avea foi matou o se aiga autasi, o tagata uma e pipii i le tau pisinisi "faʻatasi, tuuto, faapalepale" moDc Capacitor Mo Faiga Fa'atonuina maa , Cylindrical Pusa Pusa Pusa , Fa'ameamea Pp Ata Ata, E talitonu le vaai!Matou te faʻafeiloaʻi ma le faʻamaoni i tagata fou i fafo e fausia faʻalapotopotoga faʻalapotopotoga ma faʻamoemoe foi e faʻamalosia faʻalapotopotoga aʻo faʻaogaina faʻamoemoega ua leva.

Falegaosimea fai Snubber Capacitor Mo Igbt - Fa'atauva'a maualalo leiloa o le polypropylene film Snubber capacitor mo le IGBT talosaga - CRE Fa'amatalaga:

SMJ-P fa'asologa

Fuafuaga Voltage: 1000 VDC i le 2000 VDC
Va'aiga malosi: 0.1 uf i le 3.0 uf
Fa'amauina Pitch: 22.5 mm i le 48 mm
Fausiaina: Metallized Polypropylene Dielectric Fa'alotoifale Fa'asologa Fa'asologa
Fa'aaogāga : Puipuiga o le IGBT, Li'o Tank Resonance

O le fa'amalologa a le tagata lava ia, fa'amago-ituaiga, elemene capacitor snubber e gaosia e fa'aaoga ai fa'apitoa fa'apitoa, galu tipi metallized PP ata tifaga lea e fa'amautinoa ai le maualalo o le fa'aogaina o le tagata lava ia, maualuga le gau ma le fa'atuatuaina maualuga.O le motusia o le mamafa e le manatu e tatau.O le capacitor pito i luga o loʻo faʻamaufaʻailogaina i le epoxy faʻalelei e faʻafefe.Fuafuaga fa'apitoa e fa'amautinoaina le maualalo o le fa'aogaina o le tagata lava ia.

IMG_0397.HEIC

laulau fa'amatalaga

Malolosi	Un 700V.DC,Urms400Vac;Us1050V
	Fua (mm)
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR @100KHz (mΩ)	ESL(nH)	dv/dt (V/μS)	Ipk(A)	Irms @40℃ @100KHz (A)
0.47	42.5	24.5	27.5	12	25	500	235	8
0.68	42.5	24.5	27.5	10	25	480	326.4	10
1	42.5	24.5	27.5	8	24	450	450	12
1.5	42.5	33.5	35.5	7	25	430	645	5
2	42.5	33	35.5	6	24	420	840	15
2.5	42.5	33	45	6	23	400	1000	18
3	42.5	33	45	5.5	22	380	1140	20
3	57.5	30	45	5	26	350	1050	22
3.5	42.5	33	45	5	23	350	1225	25
3.5	57.5	30	45	6	25	300	1050	22
4.7	57.5	35	50	5	28	280	1316	25
5.6	57.5	38	54	4	30	250	1400	25
6	57.5	38	54	3.5	33	230	1380	28
6.8	57.5	42.5	56	3.2	32	220	1496	32
8	57.5	42.5	56	2.8	30	200	1600	33

Malolosi	Un 1000V.DC,Urms500Vac;Us1500V
	Fua (mm)
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.47	42.5	24.5	27.5	11	25	1000	470	10
0.68	42.5	24.5	27.5	8	25	800	544	12
1	42.5	33.5	35.5	6	24	800	800	15
1.5	42.5	33	45	6	24	700	1050	15
2	42.5	33	45	5	22	700	1400	20
2.5	57.5	30	45	5	30	600	1500	22
3	57.5	35	50	4	30	600	1800	25
3.3	57.5	35	50	3.5	28	550	1815	25
3.5	57.5	38	54	3.5	28	500	1750	25
4	57.5	38	54	3.2	26	500	2000	28
4.7	57.5	42.5	56	3	25	420	1974	30
5.6	57.5	42.5	56	2.8	24	400	2240	32

Malolosi	I le 1200V.DC,Urms550Vac;Us1800V
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.47	42.5	24.5	27.5	11	24	1200	564	10
0.68	42.5	33.5	35.5	7	23	1100	748	12
1	42.5	33.5	35.5	6	22	800	800	14
1.5	42.5	33	45	5	20	800	1200	15
2	57.5	30	45	4	30	750	1500	20
2.5	57.5	35	50	4	28	700	1750	25
3	57.5	35	50	4	27	600	1800	25
3.3	57.5	38	54	4	27	550	1815	28
3.5	57.5	38	54	3.5	25	500	1750	28
4	57.5	42.5	56	3.5	25	450	1800	30
4.7	57.5	42.5	56	3.2	23	420	1974	32

Malolosi	I le 1700V.DC,Urms575Vac;Us2250V
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.33	42.5	24.5	27.5	12	25	1300	429	9
0.47	42.5	24.5	27.5	10	24	1300	611	10
0.68	42.5	33.5	35.5	8	23	1300	884	12
1	42.5	33	45	7	22	1200	1200	15
1.5	42.5	33	45	6	22	1200	1800	18
1.5	57.5	30	45	5	31	1200	1800	20
2	57.5	30	45	5	30	1100	2200	22
2.5	57.5	35	50	4	28	1100	2750	25
3	57.5	38	54	4	27	700	2100	25
3.3	57.5	38	54	3.8	26	600	1980	28
3.5	57.5	42.5	56	3.5	25	500	1750	30
4	57.5	42.5	56	3.2	25	450	1800	32

Malolosi	I le 2000V.DC,Urms700Vac;Us3000V
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.22	42.5	24.5	27.5	15	25	1500	330	10
0.33	42.5	33.5	35.5	12	24	1500	495	12
0.47	42.5	33.5	35.5	11	23	1400	658	15
0.68	42.5	33	45	8	22	1200	816	18
0.68	57.5	30	45	7	30	1100	748	20
0.82	42.5	33	45	7	28	1200	984	22
1	57.5	30	45	6	28	1100	1100	25
1.5	57.5	35	50	5	25	1000	1500	28
2	57.5	38	54	5	24	800	1600	28
2.2	57.5	42.5	56	4	23	700	1540	32

Malolosi	I le 3000V.DC,Urms750Vac;Us4500V
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms
0.15	42.5	33	45	18	28	2500	375	25
0.22	42.5	33	45	15	27	2200	484	28
0.22	57.5	35	50	15	25	2000	330	20
0.33	57.5	35	50	12	24	1800	495	20
0.47	57.5	38	54	11	23	1600	752	22
0.68	57.5	42.5	56	8	22	1500	1020	28

Ata fa'amatalaga o oloa:

Ta'iala o Mea'ai Fa'atatau:

tausisi i le konekarate", e tusa ai ma manaoga maketi, auai i totonu o le maketi tauvaga e ala i lona tulaga maualuga e faapena foi ona maua ai se kamupani sili atu ona atoatoa ma lelei mo tagata faatau e tuu atu i latou e atiina ae i se manumalo tele. ' fa'amalieina mo Fale gaosi Snubber Capacitor Mo Igbt - Low loss dielectric of polypropylene film Snubber capacitor mo le IGBT application - CRE , O le a tu'uina atu le oloa i le lalolagi atoa, e pei o: Provence, Oslo, Ekuatoa, Pe filifilia se oloa o lo'o i ai nei mai la tatou fa'amatalaga po'o le sailia o fesoasoani fa'ainisinia mo lau talosaga, e mafai ona e talanoa i le matou tagata fa'atau auaunaga e uiga i mea e mana'omia mo oe.

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O mea faigaluega falegaosimea e sili atu i le alamanuia ma o le oloa e lelei le gaosiga, e le gata i lea o le tau e matua taugofie, aoga mo tupe!

Saunia e Sabrina mai Slovakia - 2017.08.28 16:02

O le pule faʻatau o loʻo i ai se tulaga lelei Igilisi ma tomai faʻapitoa faʻapolofesa, e lelei a matou fesoʻotaʻiga.O ia o se tamaloa mafanafana ma fiafia, e manaia le ma galulue faatasi ma na avea i maʻua ma uo lelei i le na o i matou.

Saunia e Mike mai Anguilla - 2018.09.08 17:09