Tau Fa'atau'oa Saina Ac Film Capacitor - Metalized film IGBT Snubber capacitor – CRE

Fa'amatalaga Pupuu:

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Fa'amatalaga o le oloa

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Vitio e Fesootai

Manatu Faaalia (2)

O loʻo faʻaauau pea ona faʻatino e le kamupani le manatu faʻatino "pulega faʻasaienisi, tulaga lelei ma le faʻatinoga sili, faʻamuamua le tagata faʻatau moDc-Link Capacitor Mo Suiga Fa'apisinisi , Kapasitora Fa'amama Ac Maualuga-Fa'atinoga , Fa'aputuga Ata Tifaga Fa'amalolo-Eseese ua Fa'ametalaina, Matou te taliaina ma le agalelei tagata faʻatau, faʻalapotopotoga faʻapisinisi ma uo mai le lalolagi atoa e talanoa mai ia i matou ma saili le galulue faʻatasi mo taui fefaʻasoaaʻi.

Tau Fa'atau'oa Saina Ac Film Capacitor - Metalized film IGBT Snubber capacitor – CRE Fa'amatalaga:

Fa'amatalaga fa'apitoa

Vaeluaga o le vevela o le fa'agaioiga	Vevela maualuga o le fa'agaioiga., Pito i luga, maualuga: +105℃ Vevela o le vaega pito i luga: +85℃ Vevela o le vaega pito i lalo: -40℃
vaega o le gafatia	0.1μF～5.6μF
Voltage fa'atulagaina	700V.DC～3000V.DC
Kapisi	±5%(J) ;±10%(K)
Tete'e atu i le voltage	1.5Un DC/10S
Mea e fa'aumatia ai	tgδ≤0.0005 C≤1μF f=10KHztgδ≤0.001 C≥1μF f=10KHz
Tete'e i le puipuiga mai le vevela	C≤0.33μF RS≥15000 MΩ (i le 20℃ 100V.DC 60S) C>0.33μF RS*C≥5000S (i le 20℃ 100V.DC 60S)
Tetee atu i le tafe o le vai	具体见规格表
Tete'e i le afi	UL94V-0
Fa'amoemoega o le olaga	100000h(Un; Θhotspot≤85°C)
Tulaga fa'asino	IEC61071;GB/T17702;

Voltage			Un 700V.DC,Urms400Vac;Us1050V
	Fua (mm)
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR @100KHz (mΩ)	ESL(nH)	dv/dt (V/μS)	Ipk(A)	Fualaau @40℃ @100KHz (A)
0.47	42.5	24.5	27.5	12	25	500	235	8
0.68	42.5	24.5	27.5	10	25	480	326.4	10
1	42.5	24.5	27.5	8	24	450	450	12
1.5	42.5	33.5	35.5	7	25	430	645	5
2	42.5	33	35.5	6	24	420	840	15
2.5	42.5	33	45	6	23	400	1000	18
3	42.5	33	45	5.5	22	380	1140	20
3	57.5	30	45	5	26	350	1050	22
3.5	42.5	33	45	5	23	350	1225	25
3.5	57.5	30	45	6	25	300	1050	22
4.7	57.5	35	50	5	28	280	1316	25
5.6	57.5	38	54	4	30	250	1400	25
6	57.5	38	54	3.5	33	230	1380	28
6.8	57.5	42.5	56	3.2	32	220	1496	32
8	57.5	42.5	56	2.8	30	200	1600	33


Voltage			Un 1000V.DC,Urms500Vac;Us1500V
	Fua (mm)
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Ofisa o Galuega
0.47	42.5	24.5	27.5	11	25	1000	470	10
0.68	42.5	24.5	27.5	8	25	800	544	12
1	42.5	33.5	35.5	6	24	800	800	15
1.5	42.5	33	45	6	24	700	1050	15
2	42.5	33	45	5	22	700	1400	20
2.5	57.5	30	45	5	30	600	1500	22
3	57.5	35	50	4	30	600	1800	25
3.3	57.5	35	50	3.5	28	550	1815	25
3.5	57.5	38	54	3.5	28	500	1750	25
4	57.5	38	54	3.2	26	500	2000	28
4.7	57.5	42.5	56	3	25	420	1974	30
5.6	57.5	42.5	56	2.8	24	400	2240	32

Voltage			Un 1200V.DC,Urms550Vac;Us1800V
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Ofisa o Galuega
0.47	42.5	24.5	27.5	11	24	1200	564	10
0.68	42.5	33.5	35.5	7	23	1100	748	12
1	42.5	33.5	35.5	6	22	800	800	14
1.5	42.5	33	45	5	20	800	1200	15
2	57.5	30	45	4	30	750	1500	20
2.5	57.5	35	50	4	28	700	1750	25
3	57.5	35	50	4	27	600	1800	25
3.3	57.5	38	54	4	27	550	1815	28
3.5	57.5	38	54	3.5	25	500	1750	28
4	57.5	42.5	56	3.5	25	450	1800	30
4.7	57.5	42.5	56	3.2	23	420	1974	32

Voltage			Un 1700V.DC,Urms575Vac;Us2250V
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Ofisa o Galuega
0.33	42.5	24.5	27.5	12	25	1300	429	9
0.47	42.5	24.5	27.5	10	24	1300	611	10
0.68	42.5	33.5	35.5	8	23	1300	884	12
1	42.5	33	45	7	22	1200	1200	15
1.5	42.5	33	45	6	22	1200	1800	18
1.5	57.5	30	45	5	31	1200	1800	20
2	57.5	30	45	5	30	1100	2200	22
2.5	57.5	35	50	4	28	1100	2750	25
3	57.5	38	54	4	27	700	2100	25
3.3	57.5	38	54	3.8	26	600	1980	28
3.5	57.5	42.5	56	3.5	25	500	1750	30
4	57.5	42.5	56	3.2	25	450	1800	32

Voltage			Un 2000V.DC,Urms700Vac;Us3000V
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Ofisa o Galuega
0.22	42.5	24.5	27.5	15	25	1500	330	10
0.33	42.5	33.5	35.5	12	24	1500	495	12
0.47	42.5	33.5	35.5	11	23	1400	658	15
0.68	42.5	33	45	8	22	1200	816	18
0.68	57.5	30	45	7	30	1100	748	20
0.82	42.5	33	45	7	28	1200	984	22
1	57.5	30	45	6	28	1100	1100	25
1.5	57.5	35	50	5	25	1000	1500	28
2	57.5	38	54	5	24	800	1600	28
2.2	57.5	42.5	56	4	23	700	1540	32

Voltage			Un 3000V.DC,Urms750Vac;Us4500V
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Ofisa o Galuega
0.15	42.5	33	45	18	28	2500	375	25
0.22	42.5	33	45	15	27	2200	484	28
0.22	57.5	35	50	15	25	2000	330	20
0.33	57.5	35	50	12	24	1800	495	20
0.47	57.5	38	54	11	23	1600	752	22
0.68	57.5	42.5	56	8	22	1500	1020	28

Vaega

1. Palasitika, Fa'amaufa'ailogaina i le resin;

2. Uamea e fa'apipi'i i le apamemea u'amea, faigofie ona fa'apipi'i mo le IGBT;

3. Tetee atu i le voltage maualuga, tgδ maualalo, si'itia maualalo o le vevela;

4. maualalo le ESL ma le ESR;

5. Tafe malosi o le eletise.

I le fa'aaogaina o fausaga i totonu e maualalo le inductance, o pusa resin fa'apipi'i filifiliga, ma fa'amutaina fa'apitoa, ua mamanuina le SMJ-P Series mo le vave fesuia'i o IGBTS ma e mafai ona avea o ni snubbers ma faamama fa'aulufale maualuga le televave.

Ata o fa'amatalaga o oloa:

Taiala o Oloa e Fesootai:

Matou te faʻaauau pea ona faʻaleleia ma faʻaleleia a matou oloa ma toe faʻaleleia. I le taimi lava e tasi, matou te faia suʻesuʻega ma le alualu i luma mo le tau faʻatau oloa Saina Ac Film Capacitor - Metalized film IGBT Snubber capacitor – CRE, O le oloa o le a tuʻuina atu i le lalolagi atoa, e pei o: Pale, Etiopia, Costa Rica. Ona o suiga o aga masani i lenei matata, matou te aofia ai i matou lava i fefaʻatauaʻiga oloa ma taumafaiga tuuto ma le faʻaleleia atili o pulega. Matou te tausia taimi atofaina mo le tuʻuina atu, mamanu fou, lelei ma le manino mo a matou tagata faʻatau. O la matou faʻamoemoe o le tuʻuina atu lea o oloa lelei i totonu o le taimi atofaina.

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Sa tuʻuina mai e le aufaigaluega faʻapitoa a le falegaosimea le tele o fautuaga lelei i le faagasologa o le galulue faʻatasi, o se mea lelei tele lenei, matou te faʻafetai tele lava.

Saunia e Hannah mai Kalefonia - 2018.06.18 17:25

E mafai e le falegaosimea ona faʻafetaiaʻia manaʻoga o le tamaoaiga ma maketi o loʻo atiaʻe pea, ina ia lauiloa ma faʻatuatuaina a latou oloa, o le mafuaʻaga lea na matou filifilia ai lenei kamupani.

Saunia e ROGER Rivkin mai Malta - 2018.07.26 16:51