100% Fa'aputuga Ata Tifaga Taugofie Muamua - Fuafuaga o fa'aputuga ata tifaga snubber e maualuga le saoasaoa mo fa'aoga eletise eletise IGBT - CRE

100% Original Taugofie o le Ata Fa'aputuga Ata - O le mamanu o le maualuga o le saoasaoa o le eletise mo fa'aoga eletise eletise IGBT - Ata Fa'aalia o le CRE

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Fa'amatalaga o le oloa

Fa'ailoga o Oloa

Vitio e Fesootai

Manatu Faaalia (2)

O loo i ai pea a matou tagata faigaluega i le agaga o le "faaleleia atili ma le silisili ese", faatasi ai ma oloa sili ona lelei, tau talafeagai ma auaunaga lelei pe a uma ona faatau atu, matou te taumafai e maua le faatuatuaga o tagata faatau uma moKapasitora Inverter Fa'apitoa , Fa'aputuga Fa'avevela Fa'aoso Fa'aitiitiga o le Malosiaga Maualalo , Fofo Fa'apitoa mo le Malosiaga Fa'apitoa, Faatasi ai ma i matou, o lau tupe o le a puipuia ai lau pisinisi ma le saogalemu. Faamoemoe e mafai ona matou avea ma au sapalai faatuatuaina i Saina. O loo matou tulimatai atu i lau galulue faatasi.

100% Original Taugofie o le Ata Fa'aputu Ata - O le mamanu o le maualuga o le saoasaoa o le snubber film capacitors mo fa'aoga eletise eletise IGBT - CRE Detail:

Fa'amatalaga fa'apitoa

Vaeluaga o le vevela o le fa'agaioiga	Vevela maualuga o le fa'agaioiga., Pito i luga, maualuga: +105 ℃ Vevela o le vaega pito i luga: +85℃ Vevela o le vaega maualalo: -40℃
vaega o le gafatia	0.1μF～5.6μF
Voltage fa'atulagaina	700V.DC～3000V.DC
Kapisi	±5%(J);±10%(K)
Tete'e atu i le voltage	1.5Un DC/10S
Mea e fa'aumatia ai	tgδ≤0.0005 C≤1μF f=10KHz tgδ≤0.001 C≥1μF f=10KHz
Tete'e i le puipuiga mai le vevela	C≤0.33μF RS≥15000 MΩ (i le 20℃ 100V.DC 60S) C>0.33μF RS*C≥5000S (i le 20℃ 100V.DC 60S)
Tetee atu i le tafe o le vai	taga'i i le pepa fa'amaumauga
Tete'e i le afi	UL94V-0
Fa'amoemoega o le olaga	100000h(Un; Θhotspot≤85°C)
Tulaga fa'asino	IEC61071;GB/T17702;

Laulau fa'amatalaga

Voltage	Un 700V.DC,Urms400Vac;Us1050V
	Fua (mm)
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR @100KHz (mΩ)	ESL(nH)	dv/dt (V/μS)	Ipk(A)	Fualaau @40℃ @100KHz (A)
0.47	42.5	24.5	27.5	12	25	500	235	8
0.68	42.5	24.5	27.5	10	25	480	326.4	10
1	42.5	24.5	27.5	8	24	450	450	12
1.5	42.5	33.5	35.5	7	25	430	645	5
2	42.5	33	35.5	6	24	420	840	15
2.5	42.5	33	45	6	23	400	1000	18
3	42.5	33	45	5.5	22	380	1140	20
3	57.5	30	45	5	26	350	1050	22
3.5	42.5	33	45	5	23	350	1225	25
3.5	57.5	30	45	6	25	300	1050	22
4.7	57.5	35	50	5	28	280	1316	25
5.6	57.5	38	54	4	30	250	1400	25
6	57.5	38	54	3.5	33	230	1380	28
6.8	57.5	42.5	56	3.2	32	220	1496	32
8	57.5	42.5	56	2.8	30	200	1600	33
Voltage	Un 1000V.DC,Urms500Vac;Us1500V
	Fua (mm)
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Ofisa o Galuega
0.47	42.5	24.5	27.5	11	25	1000	470	10
0.68	42.5	24.5	27.5	8	25	800	544	12
1	42.5	33.5	35.5	6	24	800	800	15
1.5	42.5	33	45	6	24	700	1050	15
2	42.5	33	45	5	22	700	1400	20
2.5	57.5	30	45	5	30	600	1500	22
3	57.5	35	50	4	30	600	1800	25
3.3	57.5	35	50	3.5	28	550	1815	25
3.5	57.5	38	54	3.5	28	500	1750	25
4	57.5	38	54	3.2	26	500	2000	28
4.7	57.5	42.5	56	3	25	420	1974	30
5.6	57.5	42.5	56	2.8	24	400	2240	32
Voltage	Un 1200V.DC,Urms550Vac;Us1800V
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Ofisa o Galuega
0.47	42.5	24.5	27.5	11	24	1200	564	10
0.68	42.5	33.5	35.5	7	23	1100	748	12
1	42.5	33.5	35.5	6	22	800	800	14
1.5	42.5	33	45	5	20	800	1200	15
2	57.5	30	45	4	30	750	1500	20
2.5	57.5	35	50	4	28	700	1750	25
3	57.5	35	50	4	27	600	1800	25
3.3	57.5	38	54	4	27	550	1815	28
3.5	57.5	38	54	3.5	25	500	1750	28
4	57.5	42.5	56	3.5	25	450	1800	30
4.7	57.5	42.5	56	3.2	23	420	1974	32
Voltage	Un 1700V.DC,Urms575Vac;Us2250V
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Ofisa o Galuega
0.33	42.5	24.5	27.5	12	25	1300	429	9
0.47	42.5	24.5	27.5	10	24	1300	611	10
0.68	42.5	33.5	35.5	8	23	1300	884	12
1	42.5	33	45	7	22	1200	1200	15
1.5	42.5	33	45	6	22	1200	1800	18
1.5	57.5	30	45	5	31	1200	1800	20
2	57.5	30	45	5	30	1100	2200	22
2.5	57.5	35	50	4	28	1100	2750	25
3	57.5	38	54	4	27	700	2100	25
3.3	57.5	38	54	3.8	26	600	1980	28
3.5	57.5	42.5	56	3.5	25	500	1750	30
4	57.5	42.5	56	3.2	25	450	1800	32
Voltage	Un 2000V.DC,Urms700Vac;Us3000V
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Ofisa o Galuega
0.22	42.5	24.5	27.5	15	25	1500	330	10
0.33	42.5	33.5	35.5	12	24	1500	495	12
0.47	42.5	33.5	35.5	11	23	1400	658	15
0.68	42.5	33	45	8	22	1200	816	18
0.68	57.5	30	45	7	30	1100	748	20
0.82	42.5	33	45	7	28	1200	984	22
1	57.5	30	45	6	28	1100	1100	25
1.5	57.5	35	50	5	25	1000	1500	28
2	57.5	38	54	5	24	800	1600	28
2.2	57.5	42.5	56	4	23	700	1540	32
Voltage	Un 3000V.DC,Urms750Vac;Us4500V
Cn(μF)	L(±1)	T(±1)	H(±1)	ESR(mΩ)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Ofisa o Galuega
0.15	42.5	33	45	18	28	2500	375	25
0.22	42.5	33	45	15	27	2200	484	28
0.22	57.5	35	50	15	25	2000	330	20
0.33	57.5	35	50	12	24	1800	495	20
0.47	57.5	38	54	11	23	1600	752	22
0.68	57.5	42.5	56	8	22	1500	1020	28

Ata o fa'amatalaga o oloa:

Taiala o Oloa e Fesootai:

Matou te pipiimau i le mataupu faavae "Le Tulaga Muamua, Mamalu Silisili". Matou te tuuto atu atoatoa i le tuʻuina atu i a matou tagata faʻatau oloa lelei i tau taugofie, vave tuʻuina atu ma auaunaga faʻapolofesa mo le 100% Original Cost Effective Film Capacitor - High peak current snubber film capacitors design mo IGBT power electronics applications – CRE, O le oloa o le a tuʻuina atu i le lalolagi atoa, e pei o: Uganda, ISA, Kanata, O a matou oloa e auina atu i fafo i le lalolagi atoa. E faʻamalieina pea a matou tagata faʻatau i le matou tulaga lelei faʻatuatuaina, auaunaga faʻatau ma tau tauva. O la matou misiona o le "faʻaauau pea ona maua lou faʻamaoni e ala i le tuʻuina atu o a matou taumafaiga i le faʻaleleia atili pea o a matou oloa ma auaunaga ina ia mautinoa le faʻamalieina o matou tagata faʻaoga, tagata faʻatau, tagata faigaluega, sapalai ma nuʻu i le lalolagi atoa matou te galulue faʻatasi ai".

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E matuā laki lava le feiloaʻi ma se tagata faʻatau oloa lelei, o la ma galulue faʻatasi sili lea ona faʻamalieina, ou te manatu o le a ma toe galulue faʻatasi!